부산대학교 도서관

This article demonstrates the influence of high-temperature annealing on an interfacial layer (IL) grown by O 2 plasma on Si 0.5 Ge 0.5 substrates. The X-ray photoelectron spectroscopy results revealed that under an annealing temperature of 1000 °C, the concentration of germanium oxide in the IL decreased, and an IL with pure silicon oxide (~100%) was produced. With a decrease in germanium oxide concentration, the SiGe metal oxide semiconductor capacitor exhibited an excellent interface trap density of $1.6\times10$ 12 cm −2 eV −1 with negligible hysteresis. Furthermore, compared with 1000 °C IL annealing, 800 °C IL annealing was more suitable for preferential SiO 2 growth without relaxation and dislocation in the SiGe layer, as observed using a transmission electron microscope.