학술논문
Emitter polysilicon process optimization by RGA and process proposal for interfacial oxide growth using ozonated water
Document Type
Conference
Author
Source
2001 IEEE International Symposium on Semiconductor Manufacturing. ISSM 2001. Conference Proceedings (Cat. No.01CH37203) Semiconductor manufacturing Semiconductor Manufacturing Symposium, 2001 IEEE International. :305-308 2001
Subject
Language
Abstract
A residual gas analyzer (RGA) has been employed to analyse trace gases in a LPCVD polysilicon reactor used for emitter polysilicon process. Process steps leading up to this oxidation have been characterized in terms of water and oxygen partial pressure. An alternative process of an ozonated water rinse in the preceding wet clean is proposed in order to grow a stable and reliable ultra-thin layer of chemical oxide.