학술논문
A 0.18 /spl mu/m SiGe:C RFBiCMOS technology for wireless and gigabit optical communication applications
Document Type
Conference
Author
Kirchgessner, J.; Bigelow, S.; Chai, F.K.; Cross, R.; Dahl, P.; Duvallet, A.; Gardner, B.; Griswold, M.; Hammock, D.; Heddleson, J.; Hildreth, S.; Irudayam, A.; Lesher, C.; Meixner, T.; Meng, P.; Menner, M.; McGinley, J.; Monk, D.; Morgan, D.; Rueda, H.; Small, C.; Stewart, S.; Ting, M.; To, I.; Welch, P.; Zirkle, T.; Huang, W.M.
Source
Proceedings of the 2001 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat. No.01CH37212) Bipolar/BiCMOS circuits and technology Bipolar/BiCMOS Circuits and Technology Meeting, Proceedings of the 2001. :151-154 2001
Subject
Language
Abstract
A fully modular 0.18 /spl mu/m SiGe:C RFBiCMOS technology is described which has been developed for wireless and gigabit optical communication applications. This technology is based upon a 0.18 /spl mu/m low-power CMOS platform with dual gate oxide MOS devices and 5 layers of Cu metallization. Low Vt CMOS, isolated NMOS, analog BJT and high quality passive devices are integrated for mixed signal and RFCMOS design capability. In addition, a SiGe:C HBT device is integrated for high frequency, low power and low noise RFBiCMOS applications. This technology is supported by digital and analog libraries including 1/f noise & matching characterization, parasitic extraction and memory compilation to fully enable complex mixed-signal system designs.