부산대학교 도서관

This paper presents a mmWave switch designed using novel back-end-of-line (BEOL) in Intel 22nm FinFET (22FFL) technology. In the newly developed mmWave BEOL, ExpressVia is introduced, which allows direct transistor connection to thick metal layer. Continuous via and 3+1 thick metal layers are also enabled to provide design flexibility. Taking advantage of the new features, an ultra-wideband (DC-60GHz) series SPST switch is implemented in this technology achieving 1.9dB insertion loss, 21.0dB isolation, 17.3dB return loss, 24.1dBm IP1dB, 35.9dBm IIP3 at 28GHz within an active area of 0.00176mm 2 . Reliability measurements show the switch can handle up to 24.9dBm of power at 28GHz. The measured ${\mathrm{R}_{\text{on}}}^{\ast}\mathrm{C}_{\text{off}}$ at top metal is 107fs, which is well suited for emerging 5G applications.