학술논문

Ultra-Low Threshold and Temperature-Stable InGaN Blue and Green Laser Diodes
Document Type
Periodical
Source
IEEE Photonics Technology Letters IEEE Photon. Technol. Lett. Photonics Technology Letters, IEEE. 33(22):1235-1237 Nov, 2021
Subject
Engineered Materials, Dielectrics and Plasmas
Photonics and Electrooptics
Lasers
Power demand
Thermal stability
Standards
Vertical cavity surface emitting lasers
Chip scale packaging
Threshold current
Blue lasers
green lasers
(In, Al)GaN
laser diode (LD)
low threshold
low power consumption
augmented reality
Language
ISSN
1041-1135
1941-0174
Abstract
We report on AlInGaN-based blue and green edge-emitting lasers designed for low-current operation and low power consumption. By properly optimizing cavity length and mirror coatings, threshold currents below 5 mA are achieved on single-mode blue laser diodes (LDs) emitting at 460 nm. For output power levels below 10 mW, the LDs with an optimized chip design exhibit a decreased power consumption and an increased power stability against temperature variations compared to LDs with a standard chip design. Extended to green emitters, the new design results in single-mode LDs emitting at 515 nm with threshold currents close to 15 mA.