학술논문
12.5 kV GaN Super-Heterojunction Schottky Barrier Diodes
Document Type
Periodical
Author
Source
IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 68(11):5736-5741 Nov, 2021
Subject
Language
ISSN
0018-9383
1557-9646
1557-9646
Abstract
This article reports GaN super-heterojunction Schottky barrier diodes (SHJ-SBDs) with substantially improved performance. Metal-2DEG sidewall n-ohmic contacts were deployed to achieve low contact resistance of $0.75~\Omega ~ \cdot ~mm$ , avoiding the risk of abnormally high contact resistance caused by inaccurate etch depth control. A pGaN notch formed near the cathode successfully eliminated excessive hole conduction caused by the sidewall n-ohmic contact. Isolation was improved by a high-energy Al implantation step. The resulting SHJ-SBD exhibited a breakdown voltage (BV) of ~12.5 kV and a specific resistance of 100.8 $\text{m}\Omega ~ \cdot ~cm^{2}$ .