학술논문

Optical and structural studies of compositional inhomogeneity in strain-relaxed indium gallium nitride films

Document Type

Conference

Author

Robins, L.H.; Armstrong, J.T.; Marinenko, R.B.; Vaudin, M.D.; Bouldin, C.E.; Woicik, J.C.; Paul, A.J.; Thurber, W.R.; Miyano, K.E.; Parker, C.A.; Roberts, J.C.; Bedair, S.M.; Piner, E.L.; Reed, M.J.; El-Masry, N.A.; Donovan, S.M.; Pearton, S.J.

Source

2000 IEEE International Symposium on Compound Semiconductors. Proceedings of the IEEE Twenty-Seventh International Symposium on Compound Semiconductors (Cat. No.00TH8498) Compound semiconductors Compound Semiconductors, 2000 IEEE International Symposium on. :507-512 2000

Subject

Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Photonics and Electrooptics
Optical films
Indium
X-ray scattering
Gallium nitride
Spectroscopy
III-V semiconductor materials
Chemical vapor deposition
X-ray diffraction
Optical diffraction
Electromagnetic wave absorption

Language

Abstract

The structural and optical properties of indium gallium nitride (In/sub x/Ga/sub 1-x/N) films with 0.04

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