학술논문
Circuit reliability prediction: challenges and solutions for the device time-dependent variability characterization roadblock
Document Type
Conference
Author
Source
2021 IEEE Latin America Electron Devices Conference (LAEDC) Electron Devices Conference (LAEDC), 2021 IEEE Latin America. :1-4 Apr, 2021
Subject
Language
Abstract
The characterization of the MOSFET Time-Dependent Variability (TDV) can be a showstopper for reliability-aware circuit design in advanced CMOS nodes. In this work, a complete MOSFET characterization flow is presented, in the context of a physics-based TDV compact model, that addresses the main TDV characterization challenges for accurate circuit reliability prediction at design time. The pillars of this approach are described and illustrated through examples.