학술논문

Computation of Vertex-Edge Degree Based Topological Descriptors for Metal Trihalides Network
Document Type
Periodical
Source
IEEE Access Access, IEEE. 9:65330-65339 2021
Subject
Aerospace
Bioengineering
Communication, Networking and Broadcast Technologies
Components, Circuits, Devices and Systems
Computing and Processing
Engineered Materials, Dielectrics and Plasmas
Engineering Profession
Fields, Waves and Electromagnetics
General Topics for Engineers
Geoscience
Nuclear Engineering
Photonics and Electrooptics
Power, Energy and Industry Applications
Robotics and Control Systems
Signal Processing and Analysis
Transportation
Metals
Indexes
Harmonic analysis
Temperature sensors
Chemicals
Temperature
Stacking
Degree
topological descriptors
metal trihalides network
Language
ISSN
2169-3536
Abstract
In recent past 2D metal trihalides have evolved as useful gapless semiconductor due to their physical properties like low dimensional magnetism and thermo electric performance. Such highly appreciable physical properties of these material are because enormous natural properties like half-metallicity, polarization, spin-orbit coupling impacts, layered structure and low cost. Layered formation of these materials provides an opportunity for the field of mathematical chemistry for identification of patterns and computation of mathematical properties. This article is dedicated to compute vertex-edge-degree based topological characterization of 2D trihalides. General mathematical expressions of several vertex-edge-degree based topological indices are presented in terms of research outcomes so they can be effectively used in future industrial projects.