학술논문

Reflectance of Silicon Photomultipliers at Vacuum Ultraviolet Wavelengths
Document Type
Periodical
Author
Lv, P.Cao, G.F.Wen, L.J.Kharusi, S.A.Anton, G.Arnquist, I.J.Badhrees, I.Barbeau, P.S.Beck, D.Belov, V.Bhatta, T.Breur, P.A.Brodsky, J.P.Brown, E.Brunner, T.Mamahit, S.B.Caden, E.Cao, L.Chambers, C.Chana, B.Charlebois, S.A.Chiu, M.Cleveland, B.Coon, M.Craycraft, A.Dalmasson, J.Daniels, T.Darroch, L.St. Croix, A.D.Mesrobian-Kabakian, A.D.Deslandes, K.DeVoe, R.Vacri, M.L.D.Dilling, J.Ding, Y.Y.Dolinski, M.J.Doria, L.Dragone, A.Echevers, J.Edaltafar, F.Elbeltagi, M.Fabris, L.Fairbank, D.Fairbank, W.Farine, J.Ferrara, S.Feyzbakhsh, S.Fucarino, A.Gallina, G.Gautam, P.Giacomini, G.Goeldi, D.Gornea, R.Gratta, G.Hansen, E.V.Heffner, M.Hoppe, E.W.Hobl, J.House, A.Hughes, M.Iverson, A.Jamil, A.Jewell, M.J.Jiang, X.S.Karelin, A.Kaufman, L.J.Koffas, T.Krucken, R.Kuchenkov, A.Kumar, K.S.Lan, Y.Larson, A.Leach, K.G.Lenardo, B.G.Leonard, D.S.Li, G.Li, S.Li, Z.Licciardi, C.MacLellan, R.Massacret, N.McElroy, T.Medina-Peregrina, M.Michel, T.Mong, B.Moore, D.C.Murray, K.Nakarmi, P.Natzke, C.R.Newby, R.J.Ning, Z.Njoya, O.Nolet, F.Nusair, O.Odgers, K.Odian, A.Oriunno, M.Orrell, J.L.Ortega, G.S.Ostrovskiy, I.Overman, C.T.Parent, S.Piepke, A.Pocar, A.Pratte, J.-.Radeka, V.Raguzin, E.Rescia, S.Retiere, F.Richman, M.Robinson, A.Rossignol, T.Rowson, P.C.Roy, N.Runge, J.Saldanha, R.Sangiorgio, S.Skarpaas, K.Soma, A.K.St-Hilaire, G.Stekhanov, V.Stiegler, T.Sun, X.L.Tarka, M.Todd, J.Totev, T.I.Tsang, R.Tsang, T.Vachon, F.Veeraraghavan, V.Viel, S.Visser, G.Vivo-Vilches, C.Vuilleumier, J.Wagenpfeil, M.Wager, T.Walent, M.Wang, Q.Watkins, J.Wei, W.Wichoski, U.Wu, S.X.Wu, W.H.Wu, X.Xia, Q.Yang, H.Yang, L.Zeldovich, O.Zhao, J.Zhou, Y.Ziegler, T.
Source
IEEE Transactions on Nuclear Science IEEE Trans. Nucl. Sci. Nuclear Science, IEEE Transactions on. 67(12):2501-2510 Dec, 2020
Subject
Nuclear Engineering
Bioengineering
Photonics
Laser beams
Photodetectors
Surface treatment
Optical variables measurement
Measurement by laser beam
Diffuse reflectance
photon detection efficiency (PDE)
silicon photomultiplier (SiPM)
specular reflectance
vacuum ultraviolet (VUV)
Language
ISSN
0018-9499
1558-1578
Abstract
Characterization of the vacuum ultraviolet (VUV) reflectance of silicon photomultipliers (SiPMs) is important for large-scale SiPM-based photodetector systems. We report the angular dependence of the specular reflectance in vacuum of SiPMs manufactured by Fondazionc Bruno Kessler (FBK) and Hamamatsu Photonics K.K. (HPK) over wavelengths ranging from 120 to 280 nm. Refractive index and extinction coefficient of the thin silicon-dioxide film deposited on the surface of the FBK SiPMs are derived from reflectance data of an FBK silicon wafer with the same deposited oxide film as SiPMs. The diffuse reflectance of SiPMs is also measured at 193 nm. We use the VUV spectral dependence of the optical constants to predict the reflectance of the FBK silicon wafer and FBK SiPMs in liquid xenon.