학술논문
Ultrahigh Doping of Graphene Using Flame-Deposited MoO3
Document Type
Periodical
Author
Source
IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 41(10):1592-1595 Oct, 2020
Subject
Language
ISSN
0741-3106
1558-0563
1558-0563
Abstract
The expected high performance of graphene-based electronics is often hindered by lack of adequate doping, which causes low carrier density and large sheet resistance. Many reported graphene doping schemes also suffer from instability or incompatibility with existing semiconductor processing. Here we report ultrahigh and stable ${p}$ -type doping up to $\sim 7\times 10 ^{13}$ cm −2 ( $\sim 2\times 10 ^{21}$ cm −3 ) of monolayer graphene grown by chemical vapor deposition. This is achieved by direct polycrystalline MoO 3 growth on graphene using a rapid flame synthesis technique. With this approach, the metal-graphene contact resistance for holes is reduced to $\sim 200~\Omega \cdot \mu \text{m}$ . We also demonstrate that flame-deposited MoO 3 provides over $5\times $ higher doping of graphene, as well as superior thermal and long-term stability, compared to electron-beam deposited MoO 3 .