학술논문

Comparison Between Graphene and GaAs Quantized Hall Devices With a Dual Probe
Document Type
Periodical
Source
IEEE Transactions on Instrumentation and Measurement IEEE Trans. Instrum. Meas. Instrumentation and Measurement, IEEE Transactions on. 69(12):9374-9380 Dec, 2020
Subject
Power, Energy and Industry Applications
Components, Circuits, Devices and Systems
Electrical resistance measurement
Hall effect
Graphene
Resistance
Charge carrier density
Cryogenic electronics
Carrier density
cryogenic current comparator (CCC)
dual-probe assembly
epitaxial graphene
quantized Hall resistance (QHR)
Language
ISSN
0018-9456
1557-9662
Abstract
A graphene quantized Hall resistance (QHR) device fabricated at the National Institute of Standards and Technology, Gaithersburg, MD, USA, was measured alongside a GaAs QHR device fabricated by the National Research Council of Canada, Ottawa, ON, Canada, by comparing them to a 1- $\text{k}\Omega $ standard resistor using a cryogenic current comparator. The two devices were mounted in a custom developed dual probe that was then assessed for its viability as a suitable apparatus for precision measurements. The charge carrier density of the graphene device exhibited controllable tunability when annealed after Cr(CO) 3 functionalization. These initial measurement results suggest that making resistance comparisons is possible with a single- probe wired for two types of quantum standards—GaAs, the established material, and graphene - the newer material that may promote the development of more user-friendly equipment.