학술논문
Off-state-degradation of 170 nm and 140 nm buried LDD pMOSFETs with different HALO implants
Document Type
Conference
Author
Source
2000 IEEE International Integrated Reliability Workshop Final Report (Cat. No.00TH8515) Integrated reliability workshop Integrated Reliability Workshop Final Report, 2000 IEEE International. :158-160 2000
Subject
Language
Abstract
In this work we present an experimental analysis of the transistor parameter degradation for pMOS devices operating in the off-state-mode. The parameter degradation is investigated for devices with different HALO implants. The reason for the parameter degradation and the location of the damage which causes the parameter shift of the transistor is discussed. Finally the influence of the HALO implant on the device lifetime is presented.