학술논문

High-Quality n-Type Ge/SiGe Multilayers for THz Quantum Cascade Lasers
Document Type
Conference
Source
2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz) Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2019 44th International Conference on. :1-2 Sep, 2019
Subject
Aerospace
Bioengineering
Communication, Networking and Broadcast Technologies
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Fields, Waves and Electromagnetics
Photonics and Electrooptics
Quantum cascade lasers
Absorption
Couplings
Germanium
Tunneling
Phonons
Substrates
Language
ISSN
2162-2035
Abstract
The exploitation of intersubband transitions in Ge/SiGe quantum cascade devices could pave the way towards the integration of THz light emitters into the silicon-based technology. Aiming at the realization of a Ge/SiGe Quantum Cascade Laser (QCL), we investigate optical and structural properties of n-type Ge/SiGe coupled quantum well systems. The samples have been investigated by means of X-ray diffraction, scanning transmission electron microscopy, atom probe tomography and Fourier Transform Infrared absorption spectroscopy to assess the growth capability with respect to QCL design requirements, carefully identified by means of modelling based on the non-equilibrium Green function formalism.