학술논문

Photo Dissociation Properties of Pure and Ga Doped ZnO Nano Phases
Document Type
Conference
Source
2019 21st International Conference on Transparent Optical Networks (ICTON) Transparent Optical Networks (ICTON), 2019 21st International Conference on. :1-3 Jul, 2019
Subject
Communication, Networking and Broadcast Technologies
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Fields, Waves and Electromagnetics
Photonics and Electrooptics
Transportation
Powders
Zinc oxide
II-VI semiconductor materials
Grain size
Lattices
X-ray scattering
Nanoparticles
XRD
ZnO
Ga
TiO2
nano phase
micro phase
solar reactor
Monolinuron
Language
ISSN
2161-2064
Abstract
ZnO oxide is a promising material for optoelectronics because of its wide and direct gap (E g = 3.37 eV at room temperature). Pure and doped zinc oxide powders of various grain sizes have been synthesized by vaporisation-condensation using a solar furnace. The initial powders contained from 0 to 5 Ga mol % and 1mol ZnO+2mol Ga .This dissertation is the study of the effect of ZnO doped with Ga nano phase.The Research done initially on pure Zinc oxide doped with Ga micro phase using a simple electric oven and nano phase by the Odeillo solar furnace. The problem of this study is mainly at the phase after the doping created called "Gallate phase" ZnGa 2 O 4 , where we notice the disappearance of this nano phase which proves the high temperature effect . Results show: The appearance of the spinel phase ZnGa 2 O 4 (Gallate), in the micro powders. The grain size of nanopowders increases as the Ga concentration increases for all considered compositions.