학술논문

Impact of self-heating on reliability predictions in STT-MRAM
Document Type
Conference
Source
2018 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2018 IEEE International. :25.2.1-25.2.4 Dec, 2018
Subject
Components, Circuits, Devices and Systems
Electric breakdown
Temperature measurement
Temperature dependence
Acceleration
Temperature
Resistance
Extrapolation
Language
ISSN
2156-017X
Abstract
At breakdown conditions, large current flows in STT-MRAM devices. We experimentally show that this large current causes significant self-heating of 200-300°C, which impacts the reliability extrapolation to operating conditions. By measuring and analyzing breakdown at various temperatures and on different MgO thickness, we successfully incorporate self-heating into the breakdown model. We find that the 10 year lifetime is underestimated by a factor 10 3 at 63-percentile, to even 10 7 when applying percentile scaling to 1 ppm.