학술논문
Improved Charge Modeling of Field-Plate Enhanced AlGaN/GaN HEMT Devices Using a Physics Based Compact Model
Document Type
Conference
Source
2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2018 IEEE. :102-105 Oct, 2018
Subject
Language
Abstract
In this paper, we present a detailed analysis on the impact of the presence of gate connected field-plate towards the source contact (GFP-S) on the high-frequency performance of GaN based high-electron mobility transistors (GaN HEMTs). We have developed an accurate physics-based model for GFP-S by enhancing the recent industry standard Advance SPICE Model for GaN HEMTs. It is found that GFP-S affects the non-linear capacitance of GaN HEMTs, thereby impacting small-and large-signal RF performance of these devices. A modification of the ASM model is described that captures these effects. The modified model is validated with measured data on a GFP-S GaN HEMT device.