학술논문

Analysis of Phosphosilicate Glass Structures Formed by Atmospheric Pressure and High Throughput Low Pressure POCl3 Diffusion
Document Type
Conference
Source
2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC) Photovoltaic Energy Conversion (WCPEC), 2018 IEEE 7th World Conference on. :1530-1535 Jun, 2018
Subject
Aerospace
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Photonics and Electrooptics
Power, Energy and Industry Applications
Etching
Diffusion processes
Oxidation
Glass
Silicon
Fluid flow
low pressure
p-type silicon solar cells
phosphorus emitter
phosphosilicate glass
PSG
POCl3 diffusion
Language
Abstract
We transfer an industrial-type atmospheric pressure (AP) diffusion process using phosphorus oxychloride (POCl_3) to a low-pressure (LP) system which allows factor two higher throughput. Studying the structure of the phosphosilicate glass (PSG) and silicon dioxide layer system grown during the process reveals different layer compositions for the AP- and LP-POCl 3 technology. The studies suggest that LP-POCl 3 diffusion can form an additional top layer with very high phosphorus content. This layer might be relevant for laser doping selective emitters from the PSG. Both AP-POCl 3 and LP-POCl 3 processes with in-situ oxidation show evidence for the recently suggested mechanism of “free phosphorus oxidation”.