학술논문
Study on Amorphous InGaZnO thin film transistors optimized by oxygen neutral beam treatment
Document Type
Conference
Author
Source
2017 2nd International Conference on Communication and Electronics Systems (ICCES) Communication and Electronics Systems (ICCES), 2017 2nd International Conference on. :517-520 Oct, 2017
Subject
Language
Abstract
Amorphous InGaZnO (a-IGZO) is used as TFTs channel layer, it is deposited with atmospheric-pressure PECVD (AP-PECVD). By AP-PECVD, a-IGZO can be deposited without vacuum system, and keep the cost down and applied to large area manufacturing. To further improve the electrical characteristics of atmospheric-pressure deposited a-IGZO (AP-IGZO) TFTs, post processing by re-oxidation (NBRO) is applied to treat on top of AP-IGZO thin film. The investigation shows when the NBRO post-deposited annealing (PDA) power is 400W for 300 seconds, better electrical characteristic is achieved as mobility of 10.78 cm 2 /Vs, small subthreshold swing of 100 mV/dec, lower off-state leakage current 3.7×10 −12 A, and better I on /I off ratio of 2.76×10 6 .