부산대학교 도서관

Intermittently powered systems represent a new class of batteryless devices that operate solely on energy harvested from their environment. Due to the unreliable nature of ambient energy sources, these devices experience frequent intervals of power loss, leading to sudden reboots. Tolerating such power supply disruptions require the ability to rapidly checkpoint/save system state when power loss is imminent and restore it at the start of the next power cycle to continue computations in a seamless manner. A typical microcontroller used in these systems consists of a fast nonvolatile SRAM and a nonvolatile Flash storage. Prior work has shown how emerging nonvolatile memory technologies such as STT-MRAM can improve the energy efficiency of these systems, either by using STT-MRAM as a drop-in replacement for Flash (henceforth referred to as the SRAM+STT-MRAM memory configuration) or using STT-MRAM as unified memory (henceforth referred to as the unified STT-MRAM memory configuration). However, both these configurations have significant drawbacks. Using the SRAM+STT−MRAM configuration leads to high checkpointing overhead due to the inefficient write operations of STT-MRAM whereas using the unified STT-MRAM configuration is inefficient due to executing every program instruction directly from STT-MRAM. This paper proposes a novel Spin Hall Effect-based nonvolatile-SRAM (SNVRAM) bit-cell that combines the nonvolatility of spin devices with the speed and energy efficiency of conventional 6T SRAM cells. We explore the use of the proposed SNVRAM to replace the SRAM in a transiently powered system to mitigate the drawbacks of the aforementioned memory configurations. Simulation results using a set of evaluation benchmarks demonstrate that the SNVRAM+STT−MRAM configuration leads to significant memory energy benefits of $2.6\times $ and $2.8\times $ on average, compared to the SRAM+STT−MRAM and unified STT-MRAM memory configurations, respectively.