학술논문

Experimental Verification of Memristor-Based Material Implication NAND Operation
Document Type
Periodical
Source
IEEE Transactions on Emerging Topics in Computing IEEE Trans. Emerg. Topics Comput. Emerging Topics in Computing, IEEE Transactions on. 7(4):545-552 Jan, 2019
Subject
Computing and Processing
Memristors
Logic gates
Electrodes
Resistance
Voltage measurement
Flash memories
Current measurement
IMPLY function
material implication
memristive circuits
memristors
NAND gate implementation
resistive switching
Language
ISSN
2168-6750
2376-4562
Abstract
Memristors are being considered as promising devices for highly dense memory systems as well as the potential basis of new computational paradigms. In this scenario, and in relation with data processing, one of the more specific and differential logic functions is the material implication logic also named as IMPLY logic. Many papers have been published in this framework but few of them are related with experimental works using real memristor devices. In the paper authors show the verification of the IMPLY function by using Ni/HfO 2 /Si manufactured devices and laboratory measurements. The proper behavior of the IMPLY structure (2 memristors) has been shown. The paper also verifies the proper operation of a two-step IMPLY-based NAND gate implementation, showing the electrical behavior of the circuit in a cycling operation. A new procedure to implement a NAND gate that requires only one step is experimentally shown as well.