학술논문
A three-terminal intelligent power MOSFET with built-in reverse battery protection for automotive applications
Document Type
Periodical
Author
Source
IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 46(11):2228-2234 Nov, 1999
Subject
Language
ISSN
0018-9383
1557-9646
1557-9646
Abstract
An intelligent power MOSFET with built-in reverse battery protection, which is important for automotive power switches, has been developed. The protection is accomplished by integrating an additional power MOSFET in series with a power MOSFET and the control circuit of the additional power MOSFET. The reverse battery protection is achieved without using external control signals. The positive drain breakdown voltage for the proposed MOSFET is 71 V and the negative drain current at a drain voltage of -16 V is only -750 /spl mu/A. The on-state resistance is 170 m/spl Omega/. This new intelligent power MOSFET can replace the conventional three-terminal power MOSFET's used in automotive applications.