학술논문
Density functional theory molecular dynamics simulations and experimental measurements of a-HfO2/a-SiO/SiGe(001) and a-HfO2/a-SiO2/SiGe(001) interfaces
Document Type
Conference
Author
Source
2017 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) VLSI Technology, Systems and Application (VLSI-TSA), 2017 International Symposium on. :1-2 Apr, 2017
Subject
Language
Abstract
To determine the optimal interface between a-HfO 2 igh-K oxide and Si 0.5 Ge 0.5 (001), density functional theory molecular dynamics (DFTMD) simulations of several amorphous stoichiometric and sub-stoichiometric SiOxNy interlayers were performed. The stack with oxygen deficient a-SiO interlayer demonstrated superior electric properties because it avoided all dangling bond formation. Experimental studies confirmed that a nearly pure SiOx interface between a-HfO2 and SiGe(001) could be formed which correlated with a low interface state density.