학술논문

SPICE modeling of RRAM thermal reset transitions for circuit simulation purposes
Document Type
Conference
Source
2017 Spanish Conference on Electron Devices (CDE) Electron Devices (CDE), 2017 Spanish Conference on. :1-4 Feb, 2017
Subject
Bioengineering
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Photonics and Electrooptics
Power, Energy and Industry Applications
Capacitance
Integrated circuit modeling
SPICE
Thermal resistance
Thermal conductivity
Switches
Transient analysis
resistive switching
RRAMs
compact modeling
SPICE simulation
thermal capacitance
Language
Abstract
A physically based SPICE compact model for unipolar resistive memories is presented. The model includes ohmic and quantum conduction accounting for filamentary resistive switching operation. In addition, a detailed description of thermal effects is incorporated. Different types of conductive filaments (CFs) can be taken into consideration; in particular, tree-branch shaped filaments. The implementation in a circuit simulation tool has been performed in a modular and comprehensive manner. The reset transient response under voltage pulse operation is simulated and analyzed in depth taking into account the evolution of electric and thermal internal variables. The thermal inertia in the RRAM response has been considered and characterized.