학술논문
Electrical properties of SiGe layers grown by LPE and CVD
Document Type
Conference
Author
Source
Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159) Semiconducting and insulating materials Semiconducting and Insulating Materials, 1998. (SIMC-X) Proceedings of the 10th Conference on. :185-189 1998
Subject
Language
Abstract
In this paper we present electrical properties of a few microns thick, relaxed SiGe layers for solar cell application. The layers were characterized by means of electron beam induced current (EBIC), X-ray microanalysis (EDX), backscattered electrons, and Hall effect analysis.