부산대학교 도서관

An FPGA-based instrument with capabilities of on-board oscilloscope and nanoscale pulsing (70 ns @ $\pm$ 10 V) is presented, thus allowing exploration of the nano-scale switching of RRAM devices. The system possesses less than 1% read-out error for resistance range between 1 $\text{k}\Omega$ to 1 $\text{M}\Omega$, and demonstrated its functionality on characterizing solid-state prototype RRAM devices on wafer; devices exhibiting gradual switching behavior under pulsing with duration spanning between 30 ns to 100 $\mu$ s. The data conversion error-induced degradation on read-out accuracy is studied extensively and verified by standard linear resistor measurements. The integrated oscilloscope capability extends the versatility of our instrument, rendering a powerful tool for processing development of emerging memory technologies but also for testing theoretical hypotheses arising in the new field of memristors.