학술논문
Channel mobility and threshold voltage characterization of 4H-SiC MOSFET with antimony channel implantation
Document Type
Conference
Source
2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Wide Bandgap Power Devices and Applications (WiPDA), 2015 IEEE 3rd Workshop on. :253-256 Nov, 2015
Subject
Language
Abstract
In this work, we have investigated the effect of Antimony counter-doping in channel region of 4H-SiC MOSFETs with moderately doped p-body, relevant for power applications. Using this process, improved sub-threshold slope and high channel mobility have been achieved in conjunction with high threshold voltage. Our results indicate that the improvement in transport is associated with Sb donors close to the surface, which have negligible effect on interface trap density.