학술논문
300mm wafer level sulfur monolayer doping for III–V materials
Document Type
Conference
Author
Source
2015 26th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) Advanced Semiconductor Manufacturing Conference (ASMC), 2015 26th Annual SEMI. :451-454 May, 2015
Subject
Language
ISSN
1078-8743
2376-6697
2376-6697
Abstract
We have demonstrated sulfur monolayer doping (MLD) of In(53%)GaAs on III–V buffer/Si substrate at 300mm wafer scale and obtained sheet resistance of 303 ohms/sq with 8% uniformity. Mono-layer doping was achieved via molecular doping of sulfur and conventional annealing for dopant drive-in. Chemical reactivity, cost, environmental, safety and health aspects (all of which are crucial for high volume manufacturing) were considered in the chemical down-selection. MLD demonstrates molecular-scale control with conformal, nondestructive introduction of dopants to III–V materials