학술논문
Study and characterization of a new MOSFET voltage controlled negative resistance for super selective IC tank circuits
Document Type
Conference
Source
Proceedings of the Fifteenth National Radio Science Conference. NRSC '98 (Cat. No.98EX109) Radio science Radio Science Conference, 1998. NRSC '98. Proceedings of the Fifteenth National. :D1/1-D1/8 1998
Subject
Language
Abstract
MOSFET transistors may be fabricated with a variety of gate geometries. The trapezoidal shape provides new interesting one. If this nonstandard geometry is made dependent on the biasing condition, original behavior and new I-V characteristics are expected to be obtained. This paper presents a study and characterization of this new device and shows that it provides a voltage controlled negative resistance. It is seen to have many noticeable advantages over those devices which are already known. This new negative resistance find a wide areas of applications in communications, measurements and instrumentation. It can be used to build up a super selective tank circuits which can be entirely integrated using MOSFET technology.