학술논문
Reabsorption effects on direct band gap emission from germanium light emitting diodes
Document Type
Conference
Source
11th International Conference on Group IV Photonics (GFP) Group IV Photonics (GFP), 2014 IEEE 11th International Conference on. :179-180 Aug, 2014
Subject
Language
ISSN
1949-2081
1949-209X
1949-209X
Abstract
The lateral current flow in the lateral light emitting diode can confine carrier distribution near the top surface, and thus relatively stronger direct band gap emission is observed.