학술논문

600 mV epitaxial crystal silicon solar cells grown on seeded glass
Document Type
Conference
Source
2013 IEEE 39th Photovoltaic Specialists Conference (PVSC) Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th. :0054-0057 Jun, 2013
Subject
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Photonics and Electrooptics
Power, Energy and Industry Applications
Silicon
Epitaxial growth
Photovoltaic cells
Glass
Crystals
Substrates
silicon
epitaxy
seed layer
photovoltaic cells
Language
ISSN
0160-8371
Abstract
We report progress made at the National Renewable Energy Laboratory (NREL) on crystal silicon solar cells fabricated by epitaxially thickening thin silicon seed layers on glass using hot-wire chemical vapor deposition. Four micron thick devices grown on single-crystal silicon layer transfer seeds on glass achieved open circuit voltages (V oc ) over 600 mV and efficiencies over 10%. Other devices were grown on laser crystallized mixed phase solidification (MPS) seeds on glass and e-beam crystallized (EBC) a-Si on SiC coated glass seeds. We discuss the material quality of the various devices on seeds and summarize the prospects for the seed and epitaxy PV approach.