학술논문
UV cure impact on robust low-k with sub-nm pores and high carbon content for high performance Cu/low-k BEOL modules
Document Type
Conference
Author
Source
2013 IEEE International Interconnect Technology Conference - IITC Interconnect Technology Conference (IITC), 2013 IEEE International. :1-3 Jun, 2013
Subject
Language
ISSN
2380-632X
2380-6338
2380-6338
Abstract
UV cure on robust low-k with sub-nm pore and high carbon content (R-ELK=Robust ELK) was studied to enhance the modulus of the film. UV cure helps to create Si-CH 2 -Si bridging bond, which plays a role to enhance the modulus. UV cure does not affect the advantage of low PID (plasma-induced damage) and it was confirmed by C int (interconnect capacitance) measurement for 80 nm pitch interconnect. Besides, UV cured R-ELK demonstrated high TDDB and EM reliability, with lifetime similar to the mature ULK baseline. High TDDB reliability with further dimensional scaling was also confirmed for the test structure with 20 nm spacing.