학술논문
Etching of AIGaN/GaN HEMT structures by Cl2-based ICP
Document Type
Conference
Author
Source
2013 Spanish Conference on Electron Devices Electron Devices (CDE), 2013 Spanish Conference on. :29-32 Feb, 2013
Subject
Language
ISSN
2163-4971
Abstract
AIGaN/GaN mesa etching using different plasma combinations of Cl 2 /Ar, Cl 2 /BCl 3 and Cl 2 /CF 4 by inductively coupled plasma was investigated. It was observed that the etch rate of Cl 2 /Ar increases linearly with the Ar content. In contrast to the Ar-based mixtures, C l2 /BCl 3 and Cl 2 /CF 4 plasma combinations show a damage-free surface. Furthermore, the lowest isolation current values achieved in devices with reduced sheet resistance were achieved by using C l2 /BCl 3 plasma.