학술논문
Influence of the temperature on the equivalent noise resistance of HEMT's at microwave frequencies
Document Type
Conference
Author
Source
1997 21st International Conference on Microelectronics. Proceedings Microelectronics Microelectronics, 1997. Proceedings., 1997 21st International Conference on. 1:361-364 vol.1 1997
Subject
Language
Abstract
This paper is focused on the performance of the noise resistance R/sub n/ of HEMT's at microwave frequencies as a function of temperature. A sensitivity analysis has been performed on several noisy circuit models of low-noise devices that we had previously characterized in terms of scattering and noise parameters. Such a study has been aimed at pointing out the role played by either the electrical elements and the noise temperatures of the resistors of the equivalent circuit on the typically observed U-shaped behavior of R/sub n/.