학술논문
Rediscovery of single-event gate rupture mechanism in power MOSFETs
Document Type
Conference
Author
Source
2011 12th European Conference on Radiation and Its Effects on Components and Systems Radiation and Its Effects on Components and Systems (RADECS), 2011 12th European Conference on. :42-46 Sep, 2011
Subject
Language
ISSN
0379-6566
Abstract
The catastrophic failure mode caused by single-event gate rupture phenomenon observed in power MOSFETs still remains as a critical issue for those devices to be used in space radiation environments. Detailed analyses of the devices damaged by the phenomenon suggested a new possible mechanism. A preliminary model for the mechanism was proposed.