학술논문
On–Off Charge–Voltage Characteristics and Dopant Number Fluctuation Effects in Junctionless Double-Gate MOSFETs
Document Type
Periodical
Author
Source
IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 59(3):863-866 Mar, 2012
Subject
Language
ISSN
0018-9383
1557-9646
1557-9646
Abstract
Junctionless double-gate (DG) MOSFETs are assessed by analyzing the on–off characteristics of the mobile charge density as a function of gate voltage. Compared with undoped DG MOSFETs, junctionless MOSFETs have an inferior on–off charge performance with more degradation at higher doping. The results also indicate a major issue: dopant number fluctuations in minimum width junctionless MOSFETs. A first-order analytic expression shows that the one-sigma threshold fluctuation is proportional to the square root of doping concentration. Inclusion of the quantum effect makes no significant difference to the results.