학술논문
Low-power low-noise BJT amplifier for nuclear applications
Document Type
Conference
Author
Source
1996 IEEE Nuclear Science Symposium. Conference Record Nuclear science and medical imaging Nuclear Science Symposium, 1996. Conference Record., 1996 IEEE. 1:470-473 vol.1 1996
Subject
Language
ISSN
1082-3654
Abstract
This work present an analysis of the peculiar characteristics of the front-end electronics for radiation detectors employing bipolar transistors, taking into account the noise, speed and power-dissipation constraints. It is shown that, in a first approximation, the optimum processing time is inversely proportional to the dissipated power P/sub d/ of the front-end stage, while the optimum noise performance can be made almost independent on P/sub d/. The noise characteristics of a bipolar transistor having a maximum cut-off frequency of 8 GHz have been experimentally determined, and discussed in relation with the low-power requirements. A prototype of a charge amplifier operated with a single power supply of 3 Volt and a dissipation of 600 /spl mu/W has been tested and showed a ENC=470 electrons r.m.s. at 10 ns RC-CR shaping and with a total input capacitance of 6 pF.