학술논문
Backside reflectance modulation of microscale metal interconnects
Document Type
Conference
Author
Source
2011 International Reliability Physics Symposium Reliability Physics Symposium (IRPS), 2011 IEEE International. :FA.4.1-FA.4.6 Apr, 2011
Subject
Language
ISSN
1541-7026
1938-1891
1938-1891
Abstract
The variation of backside reflectance modulation effects on metal line samples at different electrical bias and silicon backside thicknesses is investigated. Negative reflected intensity modulation is observed with temperature increase which is one to two orders of magnitude higher than published results. A backside reflectance model is developed to explain the experimental results.