학술논문
Fabrication and characterization at high temperature of AlGaN/GaN enhancement-mode HEMTs
Document Type
Conference
Source
Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011 Electron Devices (CDE), 2011 Spanish Conference on. :1-4 Feb, 2011
Subject
Language
ISSN
2163-4971
Abstract
Enhancement-mode (E-mode) high electron mobility transistors (HEMTs) based on a standard AlGaN/GaN heterostructure have been fabricated using two different methods: 19 F implantation and fluorine-based plasma treatment. The need of a thermal annealing after both treatments has been proven in order to restore the I D and g m levels. DC characterization at high temperature has demonstrated that I D and g m decrease reversibly due to the reduction of the electron mobility and the drift velocity. Pulsed measurements (state period and variable pulse width) have been performed to study the self-heating effects.