학술논문
Prediction of the Response of the Commercial BPW34FS Silicon p-i-n Diode Used as Radiation Monitoring Sensors up to Very High Fluences
Document Type
Periodical
Author
Source
IEEE Transactions on Nuclear Science IEEE Trans. Nucl. Sci. Nuclear Science, IEEE Transactions on. 57(4):2066-2073 Aug, 2010
Subject
Language
ISSN
0018-9499
1558-1578
1558-1578
Abstract
The effect of radiation damage on Silicon p-i-n diodes has been studied. I–V characteristics of BPW34FS silicon p-i-n diodes irradiated with 24 GeV/c protons up to 6.3$\, \times {10}^{15}~{\rm n}_{\rm eq}/{\hbox {cm}}^{2}$ have been measured and analyzed. A parameterization predicting the radiation response in the fluence range relevant for the use of the diodes as radiation monitors in Super-LHC experiments is presented.