학술논문
On the systematic analysis of ring-delay performance using statistical behavior model
Document Type
Conference
Author
Source
2009 International Semiconductor Device Research Symposium Semiconductor Device Research Symposium, 2009. ISDRS '09. International. :1-2 Dec, 2009
Subject
Language
Abstract
A simple statistical behavior ring-delay model is proposed for the first time. Based on this model, the correlation between FETs' DC drive currents and AC performance (e.g., delay of ring oscillators) under different scenarios in 32 nm process technology are systematically studied. The extracted model coefficients trend helps to gain deeper insight on the nodal voltage waveform and impacts of the FETs' DC/AC components. This model is proved to be a novel characterization technique and process monitor to bridge the AC-DC performance and provide guidelines in performance optimization.