학술논문
SEGR/SEB Test Results on Emerging Hi-Rel Power MOSFETs
Document Type
Conference
Author
Source
2009 IEEE Radiation Effects Data Workshop Radiation Effects Data Workshop, 2009 IEEE. :76-81 Jul, 2009
Subject
Language
ISSN
2154-0519
2154-0535
2154-0535
Abstract
Test results for several newly available Hi-Rel total dose hardened power MOSFETs are presented. The safe-operating-area (SOA) of several devices were determined with Ag and Xe ions having incident LETs of 42.2 and 53.1 MeV cm 2 /mg, respectively. Test results show these devices are comparable to currently available total dose hardened technology.