학술논문
A new physical model for the kink effect on InAlAs/InGaAs HEMTs
Document Type
Conference
Author
Source
Proceedings of International Electron Devices Meeting Electron devices Electron Devices Meeting, 1995. IEDM '95., International. :201-204 1995
Subject
Language
ISSN
0163-1918
Abstract
New measurements providing direct evidence linking the kink effect and impact ionization in InAlAs/InGaAs HEMTs are reported. Current kink models are not consistent with our findings. We propose a new mechanism, barrier-induced hole pile-up at the source, to explain the kink. The new model is shown to be consistent with both room temperature and low temperature measurements. These results allow formulation of a simple equivalent circuit model of the kink.