학술논문
Comparison of supply noise and substrate noise reduction in SiGe BiCMOS and FDSOI processes
Document Type
Conference
Author
Source
2009 10th International Symposium on Quality Electronic Design Quality of Electronic Design, 2009. ISQED 2009. Quality Electronic Design. :112-115 Mar, 2009
Subject
Language
ISSN
1948-3287
1948-3295
1948-3295
Abstract
In this paper, substrate noise suppression for 0.18 μm SiGe BiCMOS and fully-depleted silicon on insulator (FDSOI) processes is evaluated and compared. For both technologies, the most effective way for substrate noise reduction is assessed to identify the best approach for noise mitigation. The results show that the FDSOI process with large separation between analog and digital blocks is a more efficient substrate crosstalk suppression method compared to the best case in the SiGe BiCMOS process.