학술논문
Broadband antireflective structures for the THz spectral range fabricated on high resistive float zone silicon
Document Type
Conference
Author
Source
2008 33rd International Conference on Infrared, Millimeter and Terahertz Waves Infrared, Millimeter and Terahertz Waves, 2008. IRMMW-THz 2008. 33rd International Conference on. :1-2 Sep, 2008
Subject
Language
ISSN
2162-2027
2162-2035
2162-2035
Abstract
Antireflective structures for a spectral range from 0.1–1.2 THz are applied to the surface of high resistive float zone silicon by deep reactive ion etching. Binary hexagonal and rectangular structures yield an increase in the pulse maximum of the electric field strength of about 20 percent for one structured surface.