학술논문
Near-infrared spectroscopic photon emission microscopy of 0.13 μm silicon nMOSFETs and pMOSFETs
Document Type
Conference
Author
Source
2008 15th International Symposium on the Physical and Failure Analysis of Integrated Circuits Physical and Failure Analysis of Integrated Circuits, 2008. IPFA 2008. 15th International Symposium on the. :1-5 Jul, 2008
Subject
Language
ISSN
1946-1542
1946-1550
1946-1550
Abstract
Near-infrared photon emission spectra were obtained from the frontside of silicon nMOSFETs and pMOSFETs with a gate length of 0.13 μm and biased into saturation. These spectra were obtained using a high sensitivity in-lens spectroscopic photon emission microscope. Frontside NIR photon emission spectroscopy are performed on 0.13 μm saturated nMOSFETs and pMOSFETs at different gate and drain bias. The nMOSFETs photon emission spectra obtained are significantly different from some previously reported photon emission spectra. The NIR photon emission spectra of the nMOSFETs and pMOSFETs have similar peaks and suggest that the electric field condition in the channels of the nMOSFETs and pMOSFETs are similar.