학술논문
Efficient three-state WCDMA PA integrated with high-performance BiHEMT HBT / E-D pHEMT process
Document Type
Conference
Author
Source
2008 IEEE Radio Frequency Integrated Circuits Symposium Radio Frequency Integrated Circuits Symposium, 2008. RFIC 2008. IEEE. :149-152 Jun, 2008
Subject
Language
ISSN
1529-2517
2375-0995
2375-0995
Abstract
Power amplifiers for WCDMA applications must provide competitive power efficiency at low power levels as well as at full power. This paper presents a novel approach to obtain high PAE performance over a wide power band from three power states. It uses a novel BiHEMT process to co-integrate InGaP/GaAs HBT technology with InGaAs/AlGaAs E/D-Mode pHEMT into a single process. No bias reference voltage is required. Typical ultra-low power mode quiescent current is 5 mA.