학술논문
Self Aligned CuGeN Process for 32/22nm Nodes and Beyond
Document Type
Conference
Author
Source
2008 International Interconnect Technology Conference Interconnect Technology Conference, 2008. IITC 2008. International. :199-201 Jun, 2008
Subject
Language
ISSN
2380-632X
2380-6338
2380-6338
Abstract
Self aligned CuGeN barriers are used to improve the adhesion of Cu/SiC(N) interfaces at N45 technology. Eight times of electro-migration (EM) lifetime improvement has been demonstrated using thin CuGeN as a capping layer. Less than 5% metal lines Rs increase with a thin CuGeN capping layers were achieved at TSMC N45 node. CuGeN have more uniform films are the key to achieve low Rs increase successfully, which are important to N32/N22 and beyond technology.