학술논문

A Self-Biased and FPN-Compensated Digital APS for Hybrid CMOS Imagers
Document Type
Conference
Source
2007 IEEE International Symposium on Circuits and Systems (ISCAS) Circuits and Systems (ISCAS), 2007 IEEE International Symposium on. :2850-2853 May, 2007
Subject
Components, Circuits, Devices and Systems
Communication, Networking and Broadcast Technologies
Engineered Materials, Dielectrics and Plasmas
CMOS image sensors
CMOS technology
Dark current
Capacitive sensors
Pixel
Parasitic capacitance
Sensor arrays
Chemical technology
Integrated circuit interconnections
Signal processing
Language
ISSN
0271-4302
2158-1525
Abstract
This paper presents a new low-power and compact digital active pixel sensor (APS) for hybrid CMOS imagers. The proposed self-biased topology includes built-in dark current and input capacitance compensation, mixed integration, A/D conversion and a purely digital I/O interface, all at pixel level. Furthermore, full FPN compensation and AGC capabilities are also supplied by digitally pre-programming the individual sensitivity of each APS during the read-out phase without any speed reduction. In this sense, experimental results are reported for a 100 μ m×100 μ m complete APS circuit in standard 0.35 μ m CMOS 2-polySi 4-metal technology for IR applications.