학술논문
Fully Optimized Cu based process with dedicated cavity etch for 1.75μm and 1.45μm pixel pitch CMOS Image Sensors
Document Type
Conference
Author
Source
2006 International Electron Devices Meeting Electron Devices Meeting, 2006. IEDM '06. International. :1-4 Dec, 2006
Subject
Language
ISSN
0163-1918
2156-017X
2156-017X
Abstract
An innovative process development for sub-2μm CMOS imager sensors is described, leading to tremendous improvements on main pixel parameters like conversion gain, saturation charge, sensitivity, dark current and noise. A full 3MP demonstrator with 1.75μm pixel pitch and 1.45μm pixel pitch have been successfully designed, fabricated and characterized.